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1 / 1 1 n ??? n - channel mosfet j cs 1n60 c order codes ? marking ? package halogen free ? packaging d evice w eight jcs1n60v c - o - v - n - b jcs1n60v ipak no tube 0.30 g(typ) jcs1n60r c - o - r - n - b jcs1n60r dpak no tube 0.35 g(typ) jcs1n60rc - o - r - n - a jcs1n60r dpak no tape 0.35 g(typ) jcs1n60nc - o - n - n - a jcs1n60n sot - 223 no tape 0.15 typ ? main characteristics i d 1. 2 a v dss 6 00 v rdson - max @vgs=10v 11.0 ? qg - typ 3.2 nc ? ? ??? ? ? led ? applications ? high efficiency switch mode power supplies ? electronic lamp ballasts based on half bridge ? led power supplies ? ? ? ? c rss ( ? 3.7 pf) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? l ow gate charge ? low c rss (typical 3.7 pf ) ? fast switching ? 100% avalanche tested ? improved dv/dt capa bility ? rohs product ? order message ? package sot - 223 r
jcs 1n60 c 20 1 510b 2 / 1 1 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temper ature ? parameter symbol ? value unit j cs 1n60 v/r j cs 1n60 n ???? dss 6 00 600 v ? d t=25 t=100 ? ? 1 drain current - pulse dm 4.8 4.8 * a ??? gss 30 v ? ? 2 single pulsed avalanche energy as 7 7 mj ? ? 1 avalanche current ar 1. 2 a ?? ? 1 ar 3.5 mj ??? ? 3 peak diode recovery dv/dt ? d t c =25 - derate above 25 ??? j stg - 55 ?? l 300 r
jcs 1n60 c 20 1 510b 3 / 1 1 e lectrical c haracteristics ? parameter symbol tests conditions min typ max units ? off C characteristics ??? drain - source voltage bv dss i d =250 a, v gs =0v 6 00 - - v ?? breakdown voltage temperature coeff icient bv dss / t j i d = 1m a, referenced to 25 - 0. 6 - v/ ???? zero gate voltage drain current i dss v ds = 6 00v,v gs =0v, t c =25 - - 1 0 a v ds = 48 0v, t c =125 - - 1 0 0 a ?? gate - body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2 .0 - 4 .0 v ?? static drain - source on - resistance r ds(on) v gs =10v , i d = 0.60 a - 9.5 11. 0 ? forward transconductance g fs v ds = 4 0v , i d = 0.6 0 note 4 - 2.45 - s ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 160 200 pf output capacitance c oss - 20 28 pf reverse transfer capacitance c rss - 3.7 6. 0 pf r
jcs 1n60 c 20 1 510b 4 / 1 1 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) v dd = 30 0v,i d = 1. 2 a,r g =25? note 4 5 - 6.6 20 ns ? turn - on rise time t r - 6.0 20 ns ?? turn - off delay time t d (off) - 1 7 40 ns ?? turn - off fall time t f - 20 40 ns ? total gate charge q g v ds = 48 0v , i d = 1. 2 a v gs =10v note 4 5 - 3.2 10 nc ?? gate - source charge q gs - 1. 0 - nc ?? gate - drain charge q gd - 1.5 - nc ????? drain - source diode character istics and maximum ratings maximum continuous drain - source diode forward current i s - - 1. 2 a maximum pulsed drain - source diode forward current i sm - - 4.8 a ? drain - source diode forward voltage v sd v gs =0v, i s = 1. 2 a - - 1. 4 v ?? reverse recovery time t rr v gs =0v, i s = 1. 2 a di f /dt=100a/ s (note 4) - 1 00 - ns ? reverse recovery charge q rr - 0. 65 - c ? parameter symbol max unit jcs 1n60 v/r jcs 1n60 n ??? thermal resista nce, junction to case r th(j - c) 3.5 40 /w ? thermal resistance, junction to ambient r th(j - a) 110 150 /w ? ? 1 ? 2 l = 9 8 mh, i as = 1. 2 a, v dd =50v, r g =25 ?, ? t j =25 3 i sd 1. 2 a,di/dt 2 00a/ s,vddbv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l= 9 8 mh, i as = 1. 2 a, v dd =50v , r g =25 ? , starting t j =25 3 i sd 1. 2 a,di/dt 2 00a/ s,vddbv dss , starting t j =25 4 pulse test pulse width 300s,duty cycle2 5 essentially independent of operating temperature r
jcs 1n60 c 20 1 510b 5 / 1 1 electrical characteristics (curves) transfer characteristics on - resistance variation vs. drain current and gate voltage body diode forward voltage variation vs. source current and temperature c apacitance characteristics gate charge characteristics on - region characteristics r 1 10 0.1 1 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250s pulse test 2. t c =25 i ds (on) [a] v ds [v] 2 4 6 8 10 0.1 1 notes 1. 250s pulse test 2. v ds =40v 125 25 i d [a] v gs [v] 0.5 1.0 1.5 2.0 2.5 8 9 10 11 12 13 note t j =25 v gs =10v r ds(on) [ ] i d [a] v gs =20v 0.1 1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 notes 1. 250s pulse test 2. v gs =0v 25 150 v sd [v] i dr [a] 0 2 4 6 8 10 12 0 1 2 3 4 v ds =120v v ds =300v v ds =480v q g toltal gate charge [nc] v gs gate source voltage[v]
jcs 1n60 c 20 1 510b 6 / 1 1 electrical characteristics (curves) breakdown voltage variation vs. temperature on - resistance variation vs. temperature maximum safe operating area for jcs 1n60 v/r maximum drain cur rent vs. case temperature maximum safe operating area for jcs1n60n r -75 -50 -25 0 25 50 75 100 125 150 0.90 0.95 1.00 1.05 1.10 1.15 notes 1. v gs =0v 2. i d =250a bv dss (normalized) t j [ ] -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes 1. v gs =10v 2. i d =0.60a r ds (on) (normalized) t j [ ] 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d drain current [a] t c case temperature [ ]
jcs 1n60 c 20 1 510b 7 / 1 1 electrical characteristics (curves) transient thermal response curve for jcs 1n6 0 v/r transient thermal response curve for jcs1n60 n r
jcs 1n60 c 20 1 510b 8 / 1 1 ? package mechanical data ipak u nit mm r
jcs 1n60 c 20 1 510b 9 / 1 1 ? package mechanical data dpak reel u nit mm r
jcs 1n60 c 20 1 510b 10 / 1 1 ? package mechanical data sot - 223 u nit mm r
jcs 1n60 c 20 1 510b 11 / 1 1 ? 1. ?????? ??? ?????? ???? 2. ????? ?? 3. ????? ?????? 4 . ??? note 1. jilin sino - microelectronics co., ltd sales its product either through direct sale s or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. pleas e do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co . , ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 - 3 0 9 8 /3 0 9 9 : 86 - 432 - 6 4671533 con tact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site www.hwdz.com.cn market department add: n o.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 4675688 6 4678411 - 3098/3099 fax: 86 - 432 - 6 4671533 r

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